Non-linear piezoelectricity in wurtzite ZnO semiconductors

Atomic-scale origin of piezoelectricity in wurtzite ZnO.

ZnO has been extensively studied by virtue of its remarkably high piezoelectric responses, especially in nanowire forms. Currently, the high piezoelectricity of wurtzite ZnO is understood in terms of the covalent-bonding interaction between Zn 3d and O 2p orbitals. However, the Zn 3d orbitals are not capable of forming hybridized orbitals with the O 2pz orbitals since the Zn ion is characterize...

Polarons in Wurtzite Nitride Semiconductors

Polaron binding energy and effective mass are calculated for semiconductors with wurtzite crystalline structure from the first order electron-phonon corrections to the self-energy. A recently introduced Fröhlich-like electron-phonon interaction Hamiltonian which accounts for the LO and TO polarizations mixing due to the anisotropy is used in the calculation. The polaronic damping rates are eval...

Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

Wurtzite-derived ternary I–III–O2 semiconductors

Ternary zincblende-derived I-III-VI2 chalcogenide and II-IV-V2 pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2 oxide semiconductors with a wurtzite-derived β-NaFeO2 structure are limited. Wurtzite-derived β-LiGaO2 and β-AgGaO2 form alloys with ZnO and t...

Saint-Venant's Principle in Linear Piezoelectricity

Toupin's version of Saint-Venant's principle in linear elasticity is generalized to the case of linear piezoelectricity. That is, it is shown that, for a straight prismatic bar made of a linear piezoelectric material and loaded by a self-equilibrated system at one end only, the internal energy stored in the portion of the bar which is beyond a distance s from the loaded end decreases exponentia...